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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51615

Title: The Growth and Characterization of ZnSe Epilayers Grown by VPE and MOCVD
Authors: Y. K. Su
C. C. Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1988
Issue Date: 2018-12-12T07:14:03Z
Publisher: Progress in Crystal Growth and Characterization of materials
Abstract: Abstract: Zinc selenide (ZnSe) is a useful semiconductor for homojunction or heterojunction optoelectronic devices. In this paper we review the fabrication techniques of vapor phase epitaxy (VPE) and metalorganic chemical vapor deposition (MOCVD) for the growth of ZnSe epilayers. These techniques can play important roles in achieving ZnSe blue light-emitting devices. Recent and future trends in growing these devices are also reviewed and studied.
Relation: 17(4) pp.241-263
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51615
Appears in Collections:[電機工程學系] 期刊論文

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