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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51596

Title: Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrate
Authors: Yueh-Chien Lee
Sheng-Yao Hu
Walter Water
Kwong-Kau Tiong
Zhe-Chuan Feng
Yen-Ting Chen
Jen-Ching Huang
Jyh-Wei Lee
Chia-Chih Huang
Jyi-Lai Shen
Mou-Hong Cheng
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Zinc oxide
Annealing
Photoluminescence
X-ray diffraction
Date: 2009-02
Issue Date: 2018-12-07T08:14:29Z
Publisher: Journal of Luminescence
Abstract: Abstract: The structural and optical properties of ZnO films deposited on Si substrate following rapid thermal annealing (RTA) have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. After RTA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, an increase of the intensity and narrowing of the full-width at half-maximum (FWHM) of the (0 0 2) diffraction peak of the as-grown ZnO film. AFM images show roughening of the film surface due to increase of grain size after RTA. The PL spectrum reveals a significant improvement in the UV luminescence of ZnO films following RTA at 800 °C for 1 min.
Relation: 129(2) pp.148-152
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51596
Appears in Collections:[電機工程學系] 期刊論文

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