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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51595

Title: Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance
Authors: S. Levcenco
D.Dumcenco
Y.S.Huang
E.Arushanov
V.Tezlevan
K.K.Tiong
C.H.Du
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Semiconductors
Crystal growth
Optical properties
Optical spectroscopy
Date: 2010-09
Issue Date: 2018-12-07T08:11:20Z
Publisher: Journal of Alloys and Compounds
Abstract: Abstract: The temperature dependence of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals were characterized by using polarization-dependent piezoreflectance (PzR) in the temperature range of 10–300 K. The PzR measurements were carried out on the as-grown basal plane with the normal along [2 1 0] and the c axis parallel to the long edge of the crystal platelet. The PzR spectra revealed polarization-dependent and features for E⊥c and Е||c polarization, respectively. Both and features are associated with the interband excitonic transitions at Γ point and can be explained by crystal-field splitting of valence band. From a detailed lineshape fit to the PzR spectra, the temperature dependence of the transition energies and broadening parameters of the band-edge excitons were determined accurately. The temperature dependence of near band-edge excitonic transition energies were analyzed using Varshni and Bose–Einstein expressions. The temperature dependence of the broadening parameter of excitonic features also has been studied in terms of a Bose–Einstein equation that contains the electron (exciton)–longitudinal optical phonon-coupling constant. The parameters that describe the temperature variation of the excitonic transition energies and broadening parameters were evaluated and discussed.
Relation: 506(1) pp.46-50
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51595
Appears in Collections:[電機工程學系] 期刊論文

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