English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28595/40626
Visitors : 4204449      Online Users : 63
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51590

Title: Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography
Authors: Cheng Hung Chu
Chiun Da Shiue
Hsuen Wei Cheng
Ming Lun Tseng
Hai-Pang Chiang
Masud Mansuripur
Din Ping Tsai
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2010-08
Issue Date: 2018-12-07T07:22:22Z
Publisher: Optics Express
Abstract: Abstract: Amorphous thin films of Ge2Sb2Te5, sputter-deposited on a ZnSSiO2
dielectric layer, are investigated for the purpose of understanding the
structural phase-transitions that occur under the influence of tightly-focused
laser beams. Selective chemical etching of recorded marks in conjunction
with optical, atomic force, and electron microscopy as well as local electron
diffraction analysis are used to discern the complex structural features
created under a broad range of laser powers and pulse durations. Clarifying
the nature of phase transitions associated with laser-recorded marks in
chalcogenide Ge2Sb2Te5 thin films provides useful information for
reversible optical and electronic data storage, as well as for phase-change
(thermal) lithography.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51590
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback