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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51574

Title: Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
Authors: D. O. Dumcenco
S. Levcenco
Y. S. Huang
C. L. Reynolds Jr.
J. G. Reynolds
K. K. Tiong
T. Paskova
K. R. Evans
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2011-06
Issue Date: 2018-12-07T06:26:38Z
Publisher: Journal of Applied Physics
Abstract: ABSTRACT: A detailed optical characterization of a freestanding wurtzite semi-insulating Fe-doped GaN (SI-GaN:Fe) grown by hydride-vapor-phase-epitaxy was carried out by photoluminescence (PL) and contactless electroreflectance (CER) at 10 and 300 K, respectively, and photoreflectance at 300 K. Low-temperature PL spectrum of the Ga-face consisted of the Fe3+ impurity characteristic series of IR peaks with a sharp zero-phonon line (ZPL) at 1.299 eV, yellow and blue broad emission bands, and near-band-edge (NBE) emission in the ultraviolet region. The narrow linewidth of 135 μeV of the ZPL and the measured energy difference of ∼70 meV between the ZPL and E2 (high) phonon replica, which is sensitive to the lattice strain, shows good crystal quality and a strain-free incorporation of iron. The obtained transition energies of A, B, and C excitonic features in the CER spectra and the n = 2 excited states (2s) of the A and B excitons enable the estimation of the exciton binding energies. In addition to the free excitonic recombination, the PL spectrum of the Ga-face exhibited clear donor and acceptor related features in the NBE region, while the N-face exhibited a broad emission band related to the free-to-bound recombination only. The differences were explained by the presence of impurity-induced band-tail states in the N-face SI-GaN:Fe due to an increased impurity density and the incorporation of large volume vacancy-type defects.
Relation: 109(12)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51574
Appears in Collections:[電機工程學系] 期刊論文

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