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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51572

Title: Anisotropy of photoluminescence in layered semiconductors ReS2 and ReS2Au
Authors: Der-Yuh Lin
Tung-Pai Huang
Fan-Lei Wu
Chih-Ming Lin
Ying-Sheng Huang
Kwong-Kau Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Photoluminescence (PL)
Date: 2011-04
Issue Date: 2018-12-07T06:17:57Z
Publisher: Solid State Phenomena
Abstract: Abstract: The optical anisotropy properties of rhenium disulphide (ReS2) and Au-doped rhenium disulphide (ReS2:Au) have been investigated by polarization-dependent photoluminescence (PL). Because the excitonic transitions show strong polarization dependences in the near-infrared region, we used polarization-dependent PL measurements in the range between 0° and 180° to characterize the unique polarization property of ReS2 and ReS2:Au, and identify the origin of the excitonic transitions. It was observed that the variation in the amplitude of PL excitonic transitions with different polarization characteristics follows the Malus rule. In comparison with the undoped ReS2, the PL spectra of Au-doped sample show not only the main excitonic transitions near the direct band edge but also some extra transitions owing to the doping effects.
Relation: 170 pp.135-138
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51572
Appears in Collections:[電機工程學系] 期刊論文

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