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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51571

Title: Absorption-edge anisotropy of Cu2ZnSiQ4 (Q = S, Se) quaternary compound semiconductors
Authors: S. Levcenco
D. Dumcenco
Y.S. Huang
E. Arushanov
V. Tezlevan
K.K. Tiong
C.H. Du
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Semiconductors
Optical properties
Optical spectroscopy
Date: 2011-04
Issue Date: 2018-12-07T06:14:13Z
Publisher: Journal of Alloys and Compounds
Abstract: Abstract: Polarization-dependent absorption characterization of Cu2ZnSiQ4 (Q = S, Se) quaternary single crystal compound semiconductors were carried out in the temperature range of 10–300 K. The absorption measurements were performed on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. A significant shift towards lower energy was observed in the absorption spectra of E⊥c polarization with respect to those corresponding to E∥c polarization. A comprehensive analysis of the absorption spectra revealed that the absorption edges of the studied crystals are indirect allowed transitions. A schematic representation of the plausible assignments for the observed near band edge optical transitions for Cu2ZnSiQ4 was proposed. The variation of the indirect transition energies with temperature were analyzed by Varshni and Bose–Einstein expressions. The parameters that describe the temperature dependence of the indirect transition energies with different polarizations were evaluated and discussed.
Relation: 509(15) pp.4924-4928
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51571
Appears in Collections:[電機工程學系] 期刊論文

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