Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51570

Title:	Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers
Authors:	P. H. Wu Y. S. Huang H. P. Hsu D. Chrastina G. Isella H. von Känel K. K. Tiong
Contributors:	國立臺灣海洋大學:電機工程學系
Date:	2012-01
Issue Date:	2018-12-07T06:07:31Z
Publisher:	PHYSICAL REVIEW B
Abstract:	ABSTRACT: Temperature-dependent piezoreflectance (PzR) measurements were used to study the direct-gap–related optical transitions in a strain-compensated Ge/SiGe multiple-quantum-well (MQW) structure with Ge-rich SiGe barriers in the temperature range between 20 and 375 K. The PzR spectra revealed a wide range of possible optical transitions in the MQW structure. Detailed line-shape fits to the PzR spectra and comparison to a theoretical calculation based on the envelope-function approximation led to the identification of various interband transitions. In addition, the parameters that describe the temperature dependence of the excitonic transition energies [E(T)] and broadening parameters [Γ(T)] were evaluated and compared to those of the polar systems. In agreement with polar materials, [E(T)] values of the MQW structure were found to be similar to the constituent bulk well material. On the other hand, no significant dimensionality dependence of [Γ(T)] was observed, in contrast to polar systems.
Relation:	85(3)
URI:	http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51570
Appears in Collections:	[電機工程學系] 期刊論文

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