English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28611/40649
Visitors : 621762      Online Users : 78
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51568

Title: Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
Authors: H. P. Hsu
P. H. Wu
Y. S. Huang
D. Chrastina
G. Isella
H. von Känel
K. K. Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2012-01
Issue Date: 2018-12-07T05:59:17Z
Abstract: ABSTRACT: Photoreflectance (PR) was used to study the direct-gap interband transitions in strain-compensated Ge/SiGe multiple quantum well (MQW) structures with Ge-rich SiGe barriers grown by low-energy plasma-enhanced chemical vapor deposition. The PR spectra revealed a wide range of possible optical transitions in the MQW structure. Detailed lineshape fits to the PR spectra and comparison to a theoretical calculation based on the envelope-function approximation with conduction band-offset and stain compensation factor as adjust parameters led to the identification of various interband transitions. The results demonstrated that PR is a powerful technique for nondestructive optical characterization of Ge/SiGe MQW structures.
Relation: 100(4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51568
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback