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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51568

Title: Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
Authors: H. P. Hsu
P. H. Wu
Y. S. Huang
D. Chrastina
G. Isella
H. von Känel
K. K. Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2012-01
Issue Date: 2018-12-07T05:59:17Z
Publisher: APPLIED PHYSICS LETTERS
Abstract: ABSTRACT: Photoreflectance (PR) was used to study the direct-gap interband transitions in strain-compensated Ge/SiGe multiple quantum well (MQW) structures with Ge-rich SiGe barriers grown by low-energy plasma-enhanced chemical vapor deposition. The PR spectra revealed a wide range of possible optical transitions in the MQW structure. Detailed lineshape fits to the PR spectra and comparison to a theoretical calculation based on the envelope-function approximation with conduction band-offset and stain compensation factor as adjust parameters led to the identification of various interband transitions. The results demonstrated that PR is a powerful technique for nondestructive optical characterization of Ge/SiGe MQW structures.
Relation: 100(4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51568
Appears in Collections:[電機工程學系] 期刊論文

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