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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51567

Title: Photoluminescence characterization of vertically aligned ZnO microrods
Authors: Dumitru Dumcenco
D. H. Kuo
Ying-Sheng Huang
K. K. Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: II–VI semiconductors
Photoluminescence
Excitons
Date: 2012-08
Issue Date: 2018-12-07T05:54:56Z
Publisher: Journal of Luminescence
Abstract: Abstract: A detailed optical characterization of vertically aligned ZnO microrods (μRs) grown using a Ni-based catalyst was carried out by excitation-power- and temperature-dependent photoluminescence (PL) measurements. Low-temperature PL spectra of ZnO μRs are dominated by near-band-edge (NBE) emission consisted of a series of sharp lines typical for the bulk ZnO. Starting from the higher energy free exciton (FX) emission feature, the majority of them can be explained by radiative recombination of excitons bound to neutral donors (D0X), defect bound exciton (DBX), two-electron satellites emission, free-to-bound, i.e. free electrons to the neutral acceptors (eA0) transition, as well as their longitudinal-optical phonon replicas. An additional excitonic line located in between the FX and D0X lines, denoted as the surface excitons (SX) for ZnO μRs is observed. The intensity of the SX line is found to be smaller than that of the nanosized counterpart and has been attributed to the surface–volume ratio effects. The excitation-power-dependent results of FX line at low and high power regimes show quite close values corresponding to, respectively, p=2 and p=1 limits of the theoretical power law expression I∼Lp and larger deviations for the D0X, SX and DBX lines. The temperature-dependent measurements confirmed the presence of eA0 line showing kT/2 influence to the position of eA0 emission line in comparison with FX. FX emissions persist up to 300 K and together with the dominant eA0 emission govern the line shape of the NBE emission range, while D0X and SX lines are quenched completely at 150 K.
Relation: 132(8) pp.1890-1895
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51567
Appears in Collections:[電機工程學系] 期刊論文

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