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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51552

Title: The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates
Authors: Y. K. Su
C. C. Chang
C. C. Wei
F. J. Hwang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1989-12
Issue Date: 2018-12-06T08:46:30Z
Publisher: Thin Solid Films
Abstract: Abstract: A closed ampoule method was used to grow ZnSe epilayers on (100) chromiumdoped semi-insulating GaAs substrates. A low resistivity ZnSe epilayer can be obtained. The effect of the growth time and the thickness on the electrical properties of the epilayer was discussed. It was found that the epilayer thickness was an important factor in determining the electrical characteristics of ZnSe epilayers.
Relation: 182(1-2) pp.53-62
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51552
Appears in Collections:[電機工程學系] 期刊論文

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