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题名: A Study of the Growth Rate of ZnSe Epilayer on GaAs Substrate Using Vapor Phase Epitaxy
作者: C.C.Chang
Y.K.Su
C.C.Wei
S.S.Chou
S.H.Yang
F.L.Hsu
贡献者: 國立臺灣海洋大學:電機工程學系
关键词: growth rate
ZnSe epilayer
GaAs substrate
vapor phase epitaxy
日期: 1991
上传时间: 2018-12-06T08:35:50Z
出版者: Journal of the Chinese Institute of Engineers
摘要: Abstract: ZnSe single crystal layer is deposited onto Cr doping semi‐insulating GaAs (100) substrate using the vapor phase transport technique. Growth time, substrate temperature, source temperature, hydrogen flow rate, hydrogen flow rate on Zn reservoir temperature, Zn reservoir temperature, hydrogen flow rate on Se reservoir temperature, and Se reservoir temperature were varied to study the growth rates of epilayers. From the experiment, it can be seen that substrate temperature, source temperature, hydrogen flow rate, hydrogen flow rate on Se reservoir and Se reservoir temperature are the important parameters in the determination of the growth rate of epilayer. The lattice mismatch between epilayer and substrate was less than 0.25%.
關聯: 14(3) pp.289-294
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51551
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