English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26994/38795
Visitors : 2389949      Online Users : 71
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51550

Title: VPE grown ZnSe/Si Pin-like visible photodiodes
Authors: W. S. Lour
C. C. Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1996-02
Issue Date: 2018-12-06T08:29:24Z
Publisher: Sold-state electronics
Abstract: Abstract: We report the fabrication and characteristics of a large-area PIN-like Si(p)/ZnSe(n−)/ZnSe(n+) visible photodiode with a 750 × 750 μm2 active area using vapor phase epitaxy (VPE). The n+-ZnSe layer was implemented by driving the evaporated In metal into undoped ZnSe layer. The doping concentration measured by C-V measurements is 5 × 1017cm−3. The unintentionally n−-ZnSe was used as an absorption layer which is sensitive over the visible light range from red to violet. Under reversed bias condition, the studied device exhibits a breakdown voltage as large as 25 V. In response to visible light, it is found that the device exhibits strong sensitivity on blue light. We obtained a responsivity of 0.14 μA per lux with a dark current of 0.2 nA μm−2 for our unoptimized devices. We observe a much larger photocurrent within the forward biased region. Based on our qualitative analysis, this large conduction current is mainly atributed to the longer diffusion length of electrons. Together with VLSI technology, the development of the high-performance detector on Si-substrate demonstrates high potential application in photoreceiver that requires short-wavelength range and a large area, at the same time.
Relation: 39(9) pp.1295-1298.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51550
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML9View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback