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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51550

Title: VPE grown ZnSe/Si Pin-like visible photodiodes
Authors: W. S. Lour
C. C. Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1996-02
Issue Date: 2018-12-06T08:29:24Z
Publisher: Sold-state electronics
Abstract: Abstract: We report the fabrication and characteristics of a large-area PIN-like Si(p)/ZnSe(n−)/ZnSe(n+) visible photodiode with a 750 × 750 μm2 active area using vapor phase epitaxy (VPE). The n+-ZnSe layer was implemented by driving the evaporated In metal into undoped ZnSe layer. The doping concentration measured by C-V measurements is 5 × 1017cm−3. The unintentionally n−-ZnSe was used as an absorption layer which is sensitive over the visible light range from red to violet. Under reversed bias condition, the studied device exhibits a breakdown voltage as large as 25 V. In response to visible light, it is found that the device exhibits strong sensitivity on blue light. We obtained a responsivity of 0.14 μA per lux with a dark current of 0.2 nA μm−2 for our unoptimized devices. We observe a much larger photocurrent within the forward biased region. Based on our qualitative analysis, this large conduction current is mainly atributed to the longer diffusion length of electrons. Together with VLSI technology, the development of the high-performance detector on Si-substrate demonstrates high potential application in photoreceiver that requires short-wavelength range and a large area, at the same time.
Relation: 39(9) pp.1295-1298.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51550
Appears in Collections:[電機工程學系] 期刊論文

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