National Taiwan Ocean University Institutional Repository:Item 987654321/51549
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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51549

Title: Effect of Annealing on PbTiO3 Thin Film Quality Improvement,
Authors: C. C. Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Annealing
PbTiO3 thin film
Perovskite structure of thin films
Date: 1996-12
Issue Date: 2018-12-06T08:25:02Z
Publisher: Thin Solid Films
Abstract: Abstract: The significant finding of this experiment was that annealing improves the quality of PbTiO3 thin film. Moreover, following a short period of annealing, a high-quality perovskite-type PbTiO3 thin film was constructed on a Pt/SiO2/Si (100) substrate at a depositing temperature of 350°C, and supports IC fabrication processes to produce PbTiO3 thin film devices. Under experimental conditions, the annealing process decreased the full width at half maximum (FWHM) of the perovskite phase (111) peak, bringing the 2θ closer to the standard 2θ of the PbTiO3 perovskite phase (111) peak defined by the Joint Committee on Powder Diffraction Standards (JCPDS). The experiment herein involved good quality perovskite-phase PbTiO3 thin film on a Pt/SiO2/Si substrate deposited at 350°C and exposure to 5.93 W/cm2 of RF power, which was then annealed at 700°C for 5 min and then allowed to return to room temperature for more than 15 min. The perovskite structure of the PbTiO3 thin film constructed under the above conditions reached an FWHM (111) peak of 0.259° and a grain size of 341 Å.
Relation: 311(1-2) pp.304-309
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51549
Appears in Collections:[Department of Electrical Engineering] Periodical Articles

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