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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51548

Title: Fabrication of high sensitivity ZnO thin film ultrasonic devices by electrochemical etch techniques
Authors: C. C .Chang
Y. E. Chen
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Fabrication
Zinc oxide
Thin film devices
Acoustic devices
Thin film circuits
Sputtering
Frequency response
Thin film sensors
Etching
Bridge circuits
Date: 1997-05
Issue Date: 2018-12-06T08:18:58Z
Publisher: IEEE TRANSACTIONS ON ULTRASONICS
FERROELECTRICS
FREQUENCY CONTROL
Abstract: Abstract: In this experiment, high quality thin film acoustic devices were constructed utilizing zinc oxide (ZnO) thin film deposition, integrated circuit (IC), and electrochemical etch techniques. The bridge type ZnO thin film ultrasonic devices produced showed acute high frequency response sensitivity, with the high frequency response at 600 KHz attaining -124 dBV /spl mu/Bar. The highest response was near 8 MHz. Sensitivity increased in direct proportion to frequency, indicating that the bridge-type ZnO thin film acoustic devices were suitable for application as ultrasonic wave sensors at high operating frequencies. Further experimentation verified that the bridge-type ZnO thin film acoustic devices fabricated also had ultrasonic signal transmitting capability and signal bidirectional devices having both transmission and reception functions were successfully constructed. Therefore, bridge-type ZnO thin film acoustic devices will continue to be developed in the future due to the reliable control possible over the structural transformations involved; and, since IC fabrication techniques can be readily adopted in the process, the manufacturing of such devices will be greatly assisted.
Relation: 44(3) pp.624-628
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51548
Appears in Collections:[電機工程學系] 期刊論文

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