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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51547

Title: A New Process for the Fabrication of Silicon-On-Insulator Structures by Using Porous Silicon
Authors: C. C. Chang
L. C. Chen
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Silicon on insulator
Porous silicon
Date: 1997-09
Issue Date: 2018-12-06T08:14:41Z
Publisher: Materials Letters,
Abstract: Abstract: This paper proposes a simplified fabrication process of silicon on insulator (SOI) structures by means of the current density controlling (CDC) method to construct the SOI structure and thereby reducing the complexity of the SOI structure fabrication process in conventional integrated circuit (IC) fabrication.
Relation: 32(4) pp.287-290
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51547
Appears in Collections:[電機工程學系] 期刊論文

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