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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51546

Title: An Integrated Pyroelectric Infrared Sensor with the PZT Thin Film
Authors: C. C. Chang
C .S. Tang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Pyroelectric
Lead zirconate titanate (PZT)
Infrared sensors
JFET
Thin films
Voltage sensitivity
Specific detectivity
Date: 1998-08
Issue Date: 2018-12-06T08:09:55Z
Publisher: Sensors and Actuators A-Physical
Abstract: Abstract: In this paper integrated pyroelectric infrared sensors have been made by combining a (Pb(Zr52Ti48)O3, PZT) thin film with an Si JFET. The JFET is used to read out the pyroelectrically generated signal. The relevant sensor parameters, voltage sensitivity and specific detectivity, are measured within a modulation frequency range from 0.2 to 10 Hz. With a 500 μm thick silicon substrate, the voltage sensitivity is Rv = 191 V W−1 and the maximum specific detectivity is D*=2 × 107 cm Hz1/2 W−1 at a modulation frequency of 1 Hz.
Relation: 65(2-3) pp.171-174
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51546
Appears in Collections:[電機工程學系] 期刊論文

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