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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51545

Title: Characterization of Lead Zirconate Titanate Thin Film Deposition onto Pt/Ti/SiO2/Si Substrates
Authors: C. C. Chang
K. H. Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Dielectric Constant
Perovskite
Annealing Time
Lead Zirconate
Lead Zirconate Titanate
Date: 1999
Issue Date: 2018-12-06T08:05:45Z
Publisher: Journal of Materials Science-Materials in Electronics
Abstract: Abstract: Lead zirconate titanate, (Pb(Zr0.52Ti0.48)O3PZT) thin films were deposited onto a Pt/Ti/SiO2/Si substrate using radio frequency (r.f.) planar magnetron sputtering in this study. The deposited PZT thin films were almost amorphous before the annealing processes and developed a perovskite structure after the annealing process. If the annealing temperature was too low or annealing time too short, pyrochlore would form. However, if the annealing temperature was too high or annealing time too long, the thin film structure would degrade due to the volatilization of PbO. The significant finding in this experiment is that high quality perovskite PZT thin films on Pt/Ti/SiO2/Si substrates can be obtained by adjusting the annealing temperature to a range of 650 °C to 850 °C and annealing time to a range from 5 to 80 min. In this experiment, the optimal annealing condition was an annealing temperature of 650 °C and time of 20 min. The properties of PZT thin film annealed at 650 °C for 20 min were dielectric constant ɛr = 869 free dielectric constant ɛT33 = 893 piezoelectric constant d33 = 2.03p m V-1 piezoelectric constant g33 = 2.57 x 10-4 V m N-1, remanent polarization P1 = 112.5 nC cm-2 and coercive field Ec= 0.061 kV cm-1.
Relation: 10(7) pp.551–556
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51545
Appears in Collections:[電機工程學系] 期刊論文

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