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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51544

Title: The effect of annealing on improving the quality of lead zirconate titanate thin films on Pt/SiO2/Si substrates
Authors: C. C. Chang
P. C. Lu
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Annealing effect
Thin film
Pt/SiO2/Si substrate
Perovskite phase
Date: 1999-04
Issue Date: 2018-12-06T07:58:27Z
Publisher: Journal of Materials processing technology
Abstract: Abstract: This paper discusses the impact of different annealing conditions on the structures of PZT thin films. At a RF power of 100 W, a substrate of 350°C and an Ar flow rate of 20 sccm (0.0094 m3/s), an amorphous PZT thin film is deposited. After annealing properly, a high quality structure and orientation-selective perovskite phase PZT thin film is constructed. When the annealing temperature is lower, the PZT thin films become a pyrochlore phase. However, when the annealing temperature is higher than 700°C, the PZT thin films become a perovskite phase. With the increase of annealing temperature, the quality of the PZT thin films also becomes better. At the annealing temperature of 750°C, the count proportion of (1 1 0) orientation is the highest and the FWHM of the (1 1 0) peak is the lowest. However, too high an annealing temperature leads to the over-volatilization of PbO, which lowers the quality of the PZT thin films. Furthermore, the proper annealing time to construct the PZT thin films with optimal structure is 5 min. Experimentally, at the annealing temperature of 750°C and for the annealing time of 5 min, perovskite PZT thin films with good quality structure can be constructed.
Relation: 95(1-3) pp.128-132
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51544
Appears in Collections:[電機工程學系] 期刊論文

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