English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27228/39071
Visitors : 2413573      Online Users : 57
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51544

Title: The effect of annealing on improving the quality of lead zirconate titanate thin films on Pt/SiO2/Si substrates
Authors: C. C. Chang
P. C. Lu
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Annealing effect
PZT
Thin film
Pt/SiO2/Si substrate
FWHM
Perovskite phase
Date: 1999-04
Issue Date: 2018-12-06T07:58:27Z
Publisher: Journal of Materials processing technology
Abstract: Abstract: This paper discusses the impact of different annealing conditions on the structures of PZT thin films. At a RF power of 100 W, a substrate of 350°C and an Ar flow rate of 20 sccm (0.0094 m3/s), an amorphous PZT thin film is deposited. After annealing properly, a high quality structure and orientation-selective perovskite phase PZT thin film is constructed. When the annealing temperature is lower, the PZT thin films become a pyrochlore phase. However, when the annealing temperature is higher than 700°C, the PZT thin films become a perovskite phase. With the increase of annealing temperature, the quality of the PZT thin films also becomes better. At the annealing temperature of 750°C, the count proportion of (1 1 0) orientation is the highest and the FWHM of the (1 1 0) peak is the lowest. However, too high an annealing temperature leads to the over-volatilization of PbO, which lowers the quality of the PZT thin films. Furthermore, the proper annealing time to construct the PZT thin films with optimal structure is 5 min. Experimentally, at the annealing temperature of 750°C and for the annealing time of 5 min, perovskite PZT thin films with good quality structure can be constructed.
Relation: 95(1-3) pp.128-132
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51544
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML11View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback