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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51543

Title: Monolithic Integration a ZnS MSM photodiode and an InGaP/GaAs HBT on a GaAs Substrate
Authors: Ming Yao Chen
Chung Cheng Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2009-02
Issue Date: 2018-12-06T07:45:54Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract: A monolithic integrated photoreceiver constructed of a ZnS MSM photodiode and an InGaP/GaAs HBT utilizing the pattern-oxide growth technique is demonstrated. The XRD and PL analyses of the as-grown ZnS epilayers exhibit good quality. The optical and electrical performance of the ZnS MSM photodiode, InGaP/GaAs HBT and integrated photoreceiver is estimated. Photocurrent induced from the ZnS MSM photodiode is amplified linearly by a common-emitter preamplifier based on an InGaP/GaAs HBT. The current amplification ratio and the voltage amplification sensitivity of the integrated photoreceiver are 18.2 and −8.7 mV µW−1, respectively. The ZnS-based integrated photoreceiver carried out successfully on a GaAs substrate indicates the potential of the pattern-oxide growth technique in the development for the II–VI WBG-based short wavelength integrated devices.
Relation: 24(4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51543
Appears in Collections:[電機工程學系] 期刊論文

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