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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51540

Title: Photoluminescence properties of MgxZn1−xO films grown by molecular beam epitaxy
Authors: T.Y. Wu
Y.S. Huang
S.Y. Hu
Y.C. Lee
K.K. Tiong
C.C. Chang
W.C. Chou
J.L. Shen
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: A1. Optical microscopy
A3. Molecular beam epitaxy
B1. Zinc compounds
B2. Semiconducting II-VI materials
Date: 2017
Issue Date: 2018-12-06T07:21:51Z
Publisher: Journal of Crystal Growth Journal of Crystal Growth
Abstract: Abstract: The optical properties of MgxZn1−xO films with x=0.03, 0.06, 0.08, and 0.11 grown by molecular beam epitaxy (MBE) have been studied by temperature-dependent photoluminescence (PL) measurement. It is presented that the full-width at half-maximum (FWHM) of the 12 K PL spectrum of MgZnO films increases with increasing Mg concentration and would deviate significantly from the simulation curve of Schubert model with higher Mg contents. The abnormal broader PL FWHM is inferred from larger compositional fluctuation by incorporating higher Mg contents, which results in larger effect of excitonic localization to induce more significant S-shaped behavior of the PL peak energy with temperature dependence. Additionally, the degree of localization increases as the linear proportion of the PL FWHM, indicating that the excitonic behavior in MgZnO films belong to the strong localization effect.
Relation: 459 pp.13-16
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51540
Appears in Collections:[電機工程學系] 期刊論文

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