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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51347

Title: Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers
Authors: Min-De Yang
Shih-Chang Tong
I-Tin Chou
Gia-Wei Shu
Ji-Lin Shen
Yueh-Chien Lee
Ying-Sheng Huang
Yang-Fang Chen
Tai-Yuan Lin
Contributors: 國立臺灣海洋大學:光電與材料科技學士學位學程(學系)
Date: 2010-10
Issue Date: 2018-11-23T05:51:42Z
Publisher: Jpn. J. Appl. Phys
Abstract: Abstract: We studied the Raman scattering of the InN epilayers with rapid thermal annealing (RTA). The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and increases asymmetric broadening as the RTA temperature is increased. We suggest that the formation of indium-related defects, such as metallic indium clusters or indium vacancies, are responsible for the change in the asymmetric ratio in the LO mode. The E2 (high) mode in the Raman spectrum does not exhibit significant change after RTA since the indium atom does not involve the E2 (high) mode.
Relation: 49
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51347
Appears in Collections:[光電科學研究所] 期刊論文

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