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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/50283

Title: Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition
Authors: Hung Yin Tsai
Chih Cheng Chang
Chih Wei Wu
Contributors: 國立臺灣海洋大學:機械與機電工程學系
Keywords: Bias,
Homoepitaxial Diamond,
Hot Filament Chemical Vapor Deposition (HFCVD),
Nitrogen Effect
Date: 2010-06
Issue Date: 2018-09-28T06:21:16Z
Publisher: Key Engineering Materials
Abstract: Abstract: The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.
Relation: 443 pp.510-515
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/50283
Appears in Collections:[機械與機電工程學系] 期刊論文

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