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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/50267

Title: Rear-surface line-contact optimization using screen-print techniques on crystalline solar cells for industrial applications
Authors: Jiajer Ho
Te-Chun Wu
Jyh-Jier Ho
Chih-Hsiang Hung
Sung-Yu Chen
Jia-Show Ho
Song-Yeu Tsai
Chau-Chang Chou
Chi-Hsiao Yeh
Contributors: 國立臺灣海洋大學:機械與機電工程學系
Keywords: RSLC (Rear-surface line-contact) solar cell
Screen-print technique
Light-beam-induced-current (LBIC) value
Conversion efficiency
Industrial application
Date: 2018-08
Issue Date: 2018-09-28T02:54:04Z
Publisher: Materials Science in Semiconductor Processing
Abstract: Abstract: This paper explores the utility of single-crystalline silicon solar cells that are treated with the screen-print technique to implement line contacts at the cells’ rear surfaces. We designed rear-surface line-contact (RSLC) solar cells using screen-print methods on n-type wafers (125 ×125 mm2) in order to produce rear surface passivation layers. The performances of these cells were then evaluated and compared to laser fired contact solar cells. We examined the rear surface passivation quality of a stack consisting of an aluminum oxide (Al2O3) passivation layer deposited by atomic layer deposition, overlaid with a silicon nitride (Si3N4) layer deposited by plasma-enhanced chemical vapor deposition. The initial outstanding surface passivation quality provided by the Al2O3/Si3N4 stacks remained high after annealing, as indicated by the average light-beam-induced-current value (85.1 mA/cm2) for the developed RSLC cells. RSLC cells exhibited conversion efficiencies of up to the optimal 18.48%, demonstrating that line-contacting processes were consistent with print screen and that the simplification of electrode process may be realized for industrial applications.
Relation: 83 pp.22-26
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/50267
Appears in Collections:[Department of Mechanical and Mechatronic Engineering] Periodical Articles

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