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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48231

Title: Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy
Authors: T. –H. Yan
R. T. Huang
C. A. Wu
F. R. Chen
J. Y. Gan
J. W. Yeh
J. Narayan
Contributors: 國立臺灣海洋大學:光電與材料科技學系
Keywords: amorphous state
annealing
bond lengths
bonds (chemical)
crystallisation
electron diffraction
metallic glasses
metallic thin films
niobium alloys
silicon alloys
sputter deposition
tantalum alloys
titanium alloys
transmission electron microscopy
X-ray diffraction
zirconium alloys
Date: 2009-12
Issue Date: 2018-08-20T01:20:22Z
Publisher: Applied physical letters
Abstract: Abstract: In this letter, we have reported on initial stages of atomic ordering in ZrTaTiNbSi amorphous films during annealing. The atomic ordering and structure evolution were studied in Zr17Ta16Ti19Nb22Si26 amorphous films as a function of annealing temperature in the temperature range from 473 to 1173 K. Up to annealing temperature of 1173 K, the films retained amorphous structure, but the degree of disorder is increased with the increase in temperature. The formation of Si-M covalent bonds, which contributed to the local atomic arrangement, occurred in the initial stages of ordering. The bonding reactions between Si and other metal species explain the anomalous structural changes which were observed in x-ray diffraction and transmission electron microscopy. We discuss the stages of phase transformation for amorphous films as a function of annealing temperature. From these results, we propose that annealing leads to formation of random Si-M4 tetrahedron, and two observed rings, a first and second in the electron diffraction patterns compared to M-M and Si-M bond length, respectively.
Relation: 95(24)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48231
Appears in Collections:[光電科學研究所] 期刊論文

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