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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48230

Title: Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
Authors: Jin-Yu Shiu
Chung-Yu Lu
Ting-Yi Su
R. T. Huang
Herbert Zirath
Niklas Rorsman
Edward Yi Chang
Contributors: 國立臺灣海洋大學:光電與材料科技學系
Date: 2010-02
Issue Date: 2018-08-20T01:10:55Z
Publisher: Japanese Journal of Applied Physics
Abstract: Abstract: A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). A high sheet resistivity and thermally stable isolation were demonstrated. The microstructures of implanted and postannealed specimens were investigated by transmission electron microscopy (TEM). The dependences of the sheet resistivity and different postannealing temperatures were correlated with the defect clusters and microstructure of lattice stacking faults. After 300 °C annealing, the sheet resistivity was higher than 1012 Ω/square, which was attributed to the severe defect interaction eliminating the trapping centers and reducing the leakage current. A maximum output power density of 5.3 W/mm at Vgs=-4 V and Vds=50 V at 3 GHz was demonstrated on lag-free HEMTs without field plates on sapphire substrate.
Relation: 49(2)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48230
Appears in Collections:[光電科學研究所] 期刊論文

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