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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48229

Title: A TEM investigation of retained defects in Si wafer by 1 MeV Si ions bombardment
Authors: J. Y. Hsu
R. T. Huang
M. J. Hung
Y.C. Yu
Contributors: 國立臺灣海洋大學:光電與材料科技學系
Keywords: Si
Ion implantation
EOR damage
Date: 2010-06
Issue Date: 2018-08-20T01:04:35Z
Publisher: Nuclear Instruments and Methods in Physics Research B
Abstract: Abstract: The defects in a Si wafer bombarded with Si ions were studied by using a transmission electron microscopy. The Si (1 0 0) samples were implanted with 1 MeV Si ions to fluences from 5 × 1014 to 1 × 1016 ions/cm2. After implantation, the samples were annealed from 400 to 1000 °C for 30 min. A damaged layer was observed in the as-implanted sample. However, a continuous and amorphous buried-layer was fully formed at a fluence of 2 × 1015 ions/cm2. The amorphous layer was about 1.0 μm from the surface and was about 0.3–0.7 μm in width. It should be noted that no obvious defects were observed in the region between the surface and the buried-layer for the as-implanted sample. In addition, we found that the retained defects were transferred from the isotropic dislocation loops to anisotropic dislocations if the amorphous layer saturation.
Relation: 268(11-12) pp.2193-2196
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48229
Appears in Collections:[光電科學研究所] 期刊論文

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