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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48228

Title: (In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy
Authors: F. Xu
P. W. Huang
J. H. Huang
R. T. Huang
W. N. Lee
T. S. Chin
Y. W. Du
Contributors: 國立臺灣海洋大學:光電與材料科技學系
Keywords: Magnetic semiconductor nanowire
Molecular-beam epitaxy
(In, Mn)As
Date: 2011-01
Issue Date: 2018-08-20
Publisher: Solid State Communications
Abstract: Abstract: (In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along [−110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires.
Relation: 151(2) pp.169-172
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48228
Appears in Collections:[光電科學研究所] 期刊論文

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