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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48221

Title: Local structure and magnetic properties of ferromagnetic GaMnAsmade by helium ion induced epitaxial crystallization annealing
Authors: C.H. Chena
H. Niu
D.C. Yan
H.H. Hsieh
R.T. Huang
C.C. Chi
C.P. Lee
Contributors: 國立臺灣海洋大學:光電與材料科技學系
Keywords: Diluted magnetic semiconductor
Ion implantation
Ion beam induced epitaxial crystallization
Date: 2014-08
Issue Date: 2018-08-16T07:25:55Z
Publisher: Applied Surface Science
Abstract: Abstract: In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized.
Relation: 310 pp.210-213
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48221
Appears in Collections:[光電科學研究所] 期刊論文

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