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题名: Hybrid 2D/3D MoS2/GaN heterostructures for dual functional photoresponse
作者: Chun-Ying Huang
Cheng Chang
Guan-Zhang Lu
Wen-Chun Huang
Chun-Sheng Huang
Ming-Liang Chen
Tzu-Neng Lin
Ji-Lin Shen
Tai-Yuan Lin
贡献者: 國立臺灣海洋大學:光電與材料科技學系
日期: 2018-06
上传时间: 2018-08-15T03:38:59Z
出版者: Appl. Phys. Lett.
摘要: Abstract: Recently, mixed-dimensional p-n heterojunctions have shown desirable optoelectronic functionalities. However, relatively little is known about the influence of interfacial traps on electron transport under external bias. Here, we explore the prominent dual optoelectronic characteristics of n-MoS2/p-GaN heterostructures, including photodetection and persistent photocurrent (PPC). The photoresponsivity was found to achieve as high as ∼105 A W−1 for 532 nm laser illumination under reverse bias. Additionally, the device exhibits the long-lasting PPC with a decay time constant (460 s) under forward bias. The results indicate that the hybrid heterojunctions not only function as high performance photodetectors under reverse bias but also have potential to use the unique property of PPC for other optoelectronic applications under forward bias alternatively.
關聯: 112(23)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48173
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