National Taiwan Ocean University Institutional Repository:Item 987654321/48149
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 28611/40652
造访人次 : 752775      在线人数 : 38
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48149

题名: Thermoelectric Properties of Alumina-Doped Bi0.4Sb1.6Te3 Nanocomposites Prepared through Mechanical Alloying and Vacuum Hot Pressing
作者: Chung-Kwei Lin
May-Show Chen
Rong-Tan Huang
Yu-Chun Cheng
Pee-Yew Lee
贡献者: 國立臺灣海洋大學:光電與材料科技學系
日期: 2015-11
上传时间: 2018-08-14T05:42:29Z
出版者: Energies
摘要: Abstract: In this study, γ-Al2O3 particles were dispersed in p-type Bi0.4Sb1.6Te3 through mechanical alloying to form γ-Al2O3/Bi0.4Sb1.6Te3 composite powders. The composite powders were consolidated using vacuum hot pressing to produce nano- and microstructured composites. Thermoelectric (TE) measurements indicated that adding an optimal amount of γ-Al2O3 nanoparticles improves the TE performance of the fabricated composites. High TE performances with figure of merit (ZT) values as high as 1.22 and 1.21 were achieved at 373 and 398 K for samples containing 1 and 3 wt % γ-Al2O3 nanoparticles, respectively. These ZT values are higher than those of monolithic Bi0.4Sb1.6Te3 samples. The ZT values of the fabricated samples at 298-423 K are 1.0-1.22; these ZT characteristics make γ-Al2O3/Bi0.4Sb1.6Te3 composites suitable for power generation applications because no other material with a similarly high ZT value has been reported at this temperature range. The achieved high ZT value may be attributable to the unique nano- and microstructures in which γ-Al2O3 nanoparticles are dispersed among the grain boundary or in the matrix grain, as revealed by high-resolution transmission electron microscopy. The dispersed γ-Al2O3 nanoparticles thus increase phonon scattering sites and reduce thermal conductivity. The results indicated that the nano- and microstructured γ-Al2O3/Bi0.4Sb1.6Te3 alloy can serve as a high-performance material for application in TE devices.
關聯: 8(11) pp.12573-12583
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48149
显示于类别:[光電科學研究所] 期刊論文

文件中的档案:

档案 描述 大小格式浏览次数
index.html0KbHTML54检视/开启


在NTOUR中所有的数据项都受到原著作权保护.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈