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题名: Cosputtering crystal growth of zinc oxide-based composite films: From the effects of doping to phase on photoactivity and gas sensing properties
作者: Yuan-Chang Liang
C.M. Lee
贡献者: 國立臺灣海洋大學:光電與材料科技學系
日期: 2016-10
上传时间: 2018-08-13T08:48:55Z
出版者: Journal of Applied Physics
摘要: Abstract: ZnO-In2O3 (InO) composite thin films were grown by radio frequency cosputtering ZnO and InO ceramic targets in this study. The indium content of the composite films was varied from 1.7 at. % to 8.2 at. % by varying the InO sputtering power during cosputtering thin-film growth. X-ray diffraction and transmission electron microscopy analysis results show that the high indium content leads to the formation of a separated InO phase in the ZnO matrix. The surface crystallite size and roughness of the ZnO-InO composite films grown here increased with an increasing indium content. Furthermore, under the conditions of a higher indium content and InO sputtering power, the number of crystal defects in the composite films increased, and the optical absorbance edge of the composite films broadened. The photoactivity and ethanol gas sensing response of the ZnO-InO composite films increased as their indium content increased; this finding is highly correlated with the microstructural evolution of ZnO-InO composite films of various indium contents, which is achieved by varying the InO sputtering power during cosputtering.
關聯: 120(13)
显示于类别:[光電科學研究所] 期刊論文


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