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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48129

Title: Visible photoassisted room-temperatrue oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing
Authors: Liang YC
Lung TW
Wang CC
Contributors: 國立臺灣海洋大學:光電與材料科技學系
Keywords: Sheets;Surface
Crystal feature
Gas-sensing response
Semiconductor
Date: 2016-11
Issue Date: 2018-08-13T08:44:14Z
Publisher: Nanoscale Research Letters
Abstract: Abstract: Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing the as-synthesized Sn2S3 thin films further in ambient air at 400 °C engendered roughened and oxidized surfaces on the Sn2S3 thin films. Transmission electron microscopy analysis revealed that the surfaces of the Sn2S3 thin films transformed into a SnO2 phase, and well-layered Sn2S3-SnO2 heterostructure thin films were thus formed. The Sn2S3-SnO2 heterostructure thin film exhibited a visible photoassisted room-temperature gas-sensing behavior toward low concentrations of NO2 gases (0.2-2.5 ppm). By contrast, the pure Sn2S3 thin film exhibited an unapparent room-temperature NO2 gas-sensing behavior under illumination. The suitable band alignment at the interface of the Sn2S3-SnO2 heterostructure thin film and rough surface features might explain the visible photoassisted room-temperature NO2 gas-sensing responses of the heterostructure thin film on exposure to NO2 gas at low concentrations in this work.
Relation: 11(1)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48129
Appears in Collections:[光電科學研究所] 期刊論文

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