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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48116

Title: Electroluminescence from ZnO/Si-Nanotips Light-Emitting Diodes
Authors: Yang-Fang Chen
Ya-Ping Hsieh
Hsin-Yi Chen
Ming-Zhang Lin
Shu-Chia Shiu
Mario Hofmann
Ming-Yau Chern
Xiaoting Jia
Ying-Jay Yang
Hsiu-Ju Chang
Hsuan-Ming Huang
Shao-Chin Tseng
Li-Chyong Chen
Kuei-Hsien Chen
Ching-Fuh Lin
Chi-Te Liang
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2009-02
Issue Date: 2018-08-13T05:51:38Z
Publisher: NANO LETTERS
Abstract: Abstract: A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self-masked dry etching process, which is compatible with current semiconductor technologies. On top of the silicon nanotip array, a layer of n-type ZnO film was grown by pulsed laser deposition. Both the narrow line width of 10 nm in cathodoluminescence spectra and the appearance of multiphonon Raman spectra up to the fourth order indicate the excellent quality of the ZnO film. The turn-on voltage of our ZnO/Si nanotip array is found to be ∼2.4 V, which is 2 times smaller than its thin film counterpart. Moreover, electroluminescence (EL) from our ZnO/Si nanotips array light-emitting diode (LED) has been demonstrated. Our results could open up new possibilities to integrate silicon-based optoelectronic devices, such as highly efficient LEDs, with standard Si ultralarge-scale integrated technology.
Relation: 9(5) pp.1839–1843
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/48116
Appears in Collections:[Institute of Optoelectronic Sciences] Periodical Articles

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