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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47512

Title: Epitaxial ferromagnetic Fe 3 Si on GaAs(111)A with atomically smooth surface and interface
Authors: M. Hong
Y. C. Liu
Y. W. Chen
S. C. Tseng
M. T. Chang
S. C. Lo
Y. H. Lin
K. Cheng
H. Y. Hung
C. H. Hsu
J. Kwo
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2015-09
Issue Date: 2018-07-31T03:09:27Z
Abstract: Abstract: Single crystal ferromagnetic Fe3Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe3Si/GaAs(111) yielded a saturation moment of 990 emu/cm3 with a small coercive field ≤1 Oe at room temperature.
Relation: 107(12)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47512
Appears in Collections:[光電科學研究所] 期刊論文

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