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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47510

Title: Probing the exciton-phonon coupling strengths of O-polar and Zn-polar ZnO wafer using hard X-ray excited optical luminescence
Authors: Wen-Feng Hsieh
Bi-Hsuan Lin
Huang-Yeh Chen
Shao-Chin Tseng
Jian-Xing Wu
Bo-Yi Chen
Chien-Yu Lee
Gung-Chian Yin
Shih-Hung Chang
Mau-Tsu Tang
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2016-09
Issue Date: 2018-07-31T02:37:28Z
Publisher: Applied Physics Letters
Abstract: Abstract: The temperature-dependent hard X-ray excited optical luminescence (XEOL) spectroscopy was used to study the optical properties of O and Zn polarity of a c-plane single crystal ZnO wafer. By analyzing the XEOL and XRD, we found an unprecedented blue shift of the free exciton transition with increasing the excited carrier density as tuning the X-ray energy across the Zn K-edge, and the O-polar face possesses better crystal structure than the Zn-polar one. This spectral blue shift is attributed to the Coulomb screening of the spontaneous polarization by the excited free carriers that result in decreasing the exciton-phonon Fröhlich interaction to reduce exciton binding energy.
Relation: 109(19)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47510
Appears in Collections:[光電科學研究所] 期刊論文

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