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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47507

Title: Peculiar near-band-edge emission of polarization-dependent XEOL from a non-polar a-plane ZnO wafer
Authors: Wen-Feng Hsieh
Bi-Hsuan Lin
Yung-Chi Wu
Huang-Yeh Chen
Shao-Chin Tseng
Jian-Xing Wu
Xiao-Yun Li
Bo-Yi Chen
Chien-Yu Lee
Gung-Chian Yin
Shih-Hung Chang
Mau-Tsu Tang
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2018-02
Issue Date: 2018-07-31T02:17:33Z
Publisher: Optics Express
Abstract: Abstract: Polarization-dependent hard X-ray excited optical luminescence (XEOL) was used to study not only the optical properties but also the crystallographic orientations of a non-polar a-plane ZnO wafer. In addition to a positive-edge jump and extra oscillations in the near-band-edge (NBE) XEOL yield, we observed a blue shift of the NBE emission peak that follows the polarization-dependent X-ray absorption near-edge structure (XANES) as the X-ray energy is tuned across the Zn K-edge. This NBE blue shift is caused by the larger X-ray absorption, generating higher free carriers to reduce the exciton-LO phonon coupling, which causes a decrease in the exciton activation energy. The extra oscillations in XANES and XEOL as the polarization is set parallel to the c-axis is attributed to simultaneous excitations of the Zn 4p - O 2p π-bond along the c-axis and the bilayer σ-bond, whereas only the σ-bond is excited when the polarization is perpendicular to the c-axis. The polarization-dependent XEOL spectra can be used to determine the crystallographic orientations.
Relation: 26(3) pp.2731-2739
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47507
Appears in Collections:[光電科學研究所] 期刊論文

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