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题名: A new stable, crystalline capping material for topological insulators
作者: J. Kwo
H. Y. Lin
C. K. Cheng
K. H. M. Chen
C. C. Tseng
S. W. Huang
M. T. Chang
S. C. Tseng
贡献者: 國立臺灣海洋大學:光電科學研究所
日期: 2018-06
上传时间: 2018-07-31T02:00:57Z
摘要: Abstract: To preserve the high quality topological surface state after air exposure without degradation, it is crucial to identify an effective capping layer. In this study, we report an effective capping layer obtained by crystallizing Se. Upon extended exposure to ultrahigh vacuum or humid air, we show by using x-ray photoemission spectroscopy that the stability and resistance to oxidation of crystalline Se capping layers are superior to those of the amorphous Se capping layer, which has been commonly used by current communities. Furthermore, time-dependent Hall measurements showed that crystalline Se capping layers had a much stronger ability to sustain the intrinsic transport properties of Bi2Se3.
關聯: 6(6)
显示于类别:[光電科學研究所] 期刊論文


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