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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47503

Title: Boundary Effects on the Optical Properties of InGaN Multiple Quantum Wells
Authors: C. W. Shih
C. M. Lai
L. H. Peng
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2003-05
Issue Date: 2018-07-31T01:16:32Z
Publisher: IEEE Journal of selected topics in quantum electronics
Abstract: Abstract: We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of ∼8.5×10<sup>-18</sup> meV · cm<sup>3</sup> and 2) change of the internal field of ∼3×10<sup>-14</sup> meV · cm<sup>2</sup> with the injected carrier density up to N<sub>inj</sub>∼10<sup>19</sup> cm<sup>-3</sup> at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.
Relation: 9(3) pp.708-715
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47503
Appears in Collections:[光電科學研究所] 期刊論文

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