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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47490

Title: Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells
Authors: L. W. Tu
C. M. Lai
C. H. Chen
W. C. Sun
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2010-11
Issue Date: 2018-07-26T06:07:57Z
Publisher: Journal of Applied Physics
Abstract: Abstract: In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single homojunction solar cells. Operation mechanisms of InGaN p-i-n single homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency (χ), open circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF). Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, Jsc and absorption increase while χ, Voc, and FF decrease. The combined effects of the absorption, χ, Voc, Jsc, and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In0.75Ga0.25N solar cell with a 4 μm i-layer thickness can exhibit as high a conversion efficiency as ∼23%. In addition, the similar trend of conversion efficiency to that of Jsc shows that Jsc is a dominant factor to determine the performance of p-i-n InGaN solar cells. Furthermore, compared with the previous simulation results without the consideration of defect density, the lower calculated conversion efficiency verifies that the sample quality has a great effect on the performance of a solar cell and a high-quality InGaN alloy is necessary for the device fabrication. Simulation results help us to better understand the electro-optical characteristics of InGaN solar cells and can be utilized for efficiency enhancement through optimization of the device structure.
Relation: 108(9)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47490
Appears in Collections:[光電科學研究所] 期刊論文

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