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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47482

Title: Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate
Authors: Jung Han
Shih-Wei Feng
Yu-Yu Chen
Chih-Ming Lai
Li-Wei Tu
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2013-12
Issue Date: 2018-07-24T05:53:45Z
Publisher: Journal of Applied Physics
Abstract: Abstract: Anisotropic strain relaxation and the resulting degree of polarization of the electronic transition in nonpolar a-plane GaN using one- and two-step growth are studied. By using two-step growth, a slower coalescence and a longer roughening-recovery process lead to larger anisotropic strain relaxation, a less striated surface, and lower densities of basal stacking fault (BSF) and prismatic stacking fault (PSF). It is suggested that anisotropic in-plane strains, surface striation, and BSF and PSF densities in nonpolar a-GaN are consequences of the rate of coalescence, the period of roughening-recovery process, and the degree of anisotropic strain relaxation. In addition, the two-step growth mode can enhance the degree of polarization of the electronic transition. The simulation results of the k⋅p perturbation approach show that the oscillator strength and degree of polarization of the electronic transition strongly depend on the in-plane strains upon anisotropic in-plane strain relaxation. The research results provide important information for optimized growth of nonpolar III-nitrides. By using two-step growth and by fabricating the devices on the high-quality nonpolar free-standing GaN substrates, high-efficiency nonpolar a-plane InGaN LEDs can be realized. Nonpolar a-plane InGaN/GaN LEDs can exhibit a strongly polarized light to improve the contrast, glare, eye discomfort and eye strain, and efficiency in display application.
Relation: 114(23)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47482
Appears in Collections:[光電科學研究所] 期刊論文

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