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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47477

Title: Experimental and theoretical study of polarized luminescence caused by anisotropic strain relaxation in nonpolar a-plane textured ZnO grown by a low-pressure chemical vapor deposition
Authors: S.W.Feng
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2015-07
Issue Date: 2018-07-24T03:50:39Z
Publisher: Applied Physics Letters
Abstract: Abstract: Anisotropic strain relaxation and the resulting degree of polarization of photoluminescence (PL) in nonpolar a-plane textured ZnO are experimentally and theoretically studied. A thicker nonpolar a-plane textured ZnO film enhances the anisotropic in-plane strain relaxation, resulting in a larger degree of polarization of PL and better sample quality. Anisotropic in-plane strains, sample quality, and degree of polarization of PL in nonpolar a-plane ZnO are consequences of the degree of anisotropic in-plane strain relaxation. By the k·p perturbation approach, simulation results of the variation of the degree of polarization for the electronic transition upon anisotropic in-plane strain relaxation agree with experimental results.
Relation: 107(2)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47477
Appears in Collections:[光電科學研究所] 期刊論文

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