English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26987/38787
Visitors : 2297904      Online Users : 33
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47473

Title: GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
Authors: Mao-Kuen Kuo
David Jui-Yang Feng
Yen-Ju Lin
Yun-Cheng Ku
Han-Yun Jhang
Tzy-Rong Lin
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2017-03
Issue Date: 2018-07-24T02:05:59Z
Publisher: Optical Materials Express
Abstract: Abstract: We designed an InAs coupled quantum-dot (QD) structure with a GaAsSb spacer to form an intermediate band (IB). The electron and hole states are calculated using the k ⋅ p method. The numerical results revealed the band alignment changes to be quasi-type-II with 16% Sb. The 1 nm AlAs layers around the QD and 1 nm GaAs layer help in broadening the intraband absorption spectrum from the far infrared region to infrared range. The coupling QD structure with an 8.5 nm GaAsSb spacer and 16% Sb concentration exhibits better photoelectric efficiency for intermediate band solar cell in the simulation, with a 3.3% enhancement of the same PIN structure with GaAs as the intrinsic region. Introducing a GaAsSb layer in the coupling QD structure will also release the maximum shear stress in QD, exhibiting a 3% release with 16% a GaAsSb spacer.
Relation: 7(4) pp.1351-1364
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47473
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback