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题名: Investigation on the Correlation Between the Crystalline and Optical Properties of InGaN Using Near-Field Scanning Optical Microscopy
作者: R. Chang
T. Y. Lin
P. K. Wei
E. H. Lin
T. L. Tseng
贡献者: 國立臺灣海洋大學:光電科學研究所
关键词: near-field scanning optical microscopy
indium compounds
gallium compounds
III-V semiconductors
wide band gap semiconductors
semiconductor epitaxial layers
domains
photoluminescence
日期: 2007-01
上传时间: 2018-07-23T03:19:43Z
出版者: ELECTROCHEMICAL AND SOLID STATE LETTERS
摘要: Abstract: We have performed the polarization-modulation near-field scanning optical microscopy (PM-NSOM) and photoluminescence NSOM (PL-NSOM) measurements on the Formula alloy epitaxial layer. Spatial variations in the crystalline quality of nanoscale domains in Formula film were found by PM-NSOM. It was found that the luminescent property of Formula correlates closely with the local crystalline quality. Regions with better crystallinity have higher luminescence intensity and longer emission wavelength, while regions with poorer crystallinity exhibit a luminescence of lower intensity and shorter emission wavelength. We show that the combination of PM-NSOM and PL-NSOM is a useful diagnostic tool to the correlation between crystalline and optical properties of the nanostructures.
關聯: 10(7) pp.217-219
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47443
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