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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47443

Title: Investigation on the Correlation Between the Crystalline and Optical Properties of InGaN Using Near-Field Scanning Optical Microscopy
Authors: R. Chang
T. Y. Lin
P. K. Wei
E. H. Lin
T. L. Tseng
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: near-field scanning optical microscopy
indium compounds
gallium compounds
III-V semiconductors
wide band gap semiconductors
semiconductor epitaxial layers
domains
photoluminescence
Date: 2007-01
Issue Date: 2018-07-23T03:19:43Z
Publisher: ELECTROCHEMICAL AND SOLID STATE LETTERS
Abstract: Abstract: We have performed the polarization-modulation near-field scanning optical microscopy (PM-NSOM) and photoluminescence NSOM (PL-NSOM) measurements on the Formula alloy epitaxial layer. Spatial variations in the crystalline quality of nanoscale domains in Formula film were found by PM-NSOM. It was found that the luminescent property of Formula correlates closely with the local crystalline quality. Regions with better crystallinity have higher luminescence intensity and longer emission wavelength, while regions with poorer crystallinity exhibit a luminescence of lower intensity and shorter emission wavelength. We show that the combination of PM-NSOM and PL-NSOM is a useful diagnostic tool to the correlation between crystalline and optical properties of the nanostructures.
Relation: 10(7) pp.217-219
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47443
Appears in Collections:[Institute of Optoelectronic Sciences] Periodical Articles

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