English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26992/38793
Visitors : 2386101      Online Users : 31
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47354

Title: Metal/GaN reaction chemistry and their electrical properties
Authors: J. H. Je
C. C. Kim
S. K. Seol
J. K. Kim
J.-L. Lee
Y. Hwu
P. Ruterana
G. Magaritondo
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: DIODES
FIELD-EFFECT
TRANSISTORS
P-TYPE GAN
NI/AU CONTACT
Date: 2004-09
Issue Date: 2018-07-16T08:44:17Z
Publisher: Phys. Stat. Sol
Abstract: Abstract: We investigated the reaction chemistry of metal contacts to GaN during annealing using X-ray photoelectron spectroscopy (XPS). GaN decomposition was estimated, using XPS, to occur in N-2 annealed Ni-alloy contacts at 550 degreesC. The reaction was greatly accelerated by the catalytic effect of Au and Pt. The decomposition was correlated with the rapid degradation of electrical properties during annealing. The results suggest that high-temperature applications may be critically limited by the degradation of metal contacts especially due to activated Ni reactivity in Ni-alloyed contacts. Meanwhile, the thermal stability of Ni/Au contact greatly improves by suppressing the activated Ni reactivity, which is able to be obtained by forming preferential Ni-O bonding through annealing in air.
Relation: 241(12) pp.2771-2774
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47354
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML15View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback