English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28608/40649
Visitors : 6447230      Online Users : 52
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47345

Title: X-ray bright-field imaging analyzes crystalline quality and defects of SiC wafers
Authors: G. Margaritondo
J. M. Yi
Y. S. Chu
Y. Zhong
J. H. Je
Y. Hwu
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: crystalline defects
X-ray bright-field imaging
quantitative analysis
crystalline quality
Date: 2007-04
Issue Date: 2018-07-16T07:15:45Z
Abstract: Abstract: A new variety of the recently developed technique `X-ray bright-field imaging' is presented. In its basic version, this approach simultaneously yields diffraction-based information on lattice distortions and radiographic information on structural inhomogeneities, and is based on the detection of reversed diffraction contrast in transmission images. The new version extends the scope of the technique to the quantitative analysis of crystalline quality parameters such as the lattice plane curvature and mosaic distribution in SiC wafers, and makes it possible to correlate such parameters directly with defect (distortions/inhomogeneities) structures.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47345
Appears in Collections:[光電科學研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback