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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47199

Title: Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer
Authors: C.C. Yu
S.U. Jen
T.C. Wu
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2005-07
Issue Date: 2018-07-04T08:51:56Z
Publisher: Appl. Surf. Sci
Abstract: Abstract: Single-crystal Ni films were made by the molecular beam epitaxy (MBE) method on Si(1 0 0) and Si(1 1 0) substrates, respectively, with an 100 Å thick Ag buffer layer. The growth temperature TS was 270 °C, and the film thickness t was 500 Å. From reflection high-energy electron diffraction (RHEED) patterns, the crystalline symmetries of the two films are clear and as expected. Intrinsic coercivities, HC(1 0 0) and HC(1 1 0), are plotted as a function of the angle of rotation ϕ around the crystal axes [1 0 0] and [1 1 0], respectively. The results show that both HC(1 0 0) and HC(1 1 0) exhibit mixed features of the crystalline (KC) and the induced uniaxial magnetic (Ku) anisotropies. Ku is the magneto-elastic energy, due to lattice mismatch at the Ni/Ag interface. Moreover, the crystalline anisotropy fields, HK(1 0 0) and HK(1 1 0), and the induced anisotropy filed, Hu, can be calculated as a function of ϕ, respectively. Then, each HC curve is fitted by the equation: HC = Ho + HK + Hu, where Ho is the isotropic pinning field. Meanwhile, domain structures were examined by the Bitter method, using Ferrofluid 707. On the Ni(1 0 0) film, we observed the charged cross-tie walls, and on the Ni(1 1 0) film, the un-charged Bloch walls.
Relation: 252(5) pp.1934-1940
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47199
Appears in Collections:[光電科學研究所] 期刊論文

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