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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47193

Title: The straining effect on tunneling resistance of Co/AlOx/Co/IrMn junctions
Authors: S.U. Jen
Yuan-Tsung Chen
Jenn-Ming Wu
Y. D. Yao
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2006-11
Issue Date: 2018-07-04T08:05:57Z
Publisher: Appl. Phys. Lett
Abstract: Abstract: The authors have fabricated a series of Co/AlOx(d(0))/Co/IrMn magnetic tunnel junctions (MTJs), with d(0)=12-30 angstrom. They can be used as ultrasensitive strain gauges. From the resistance (R) versus strain (Delta epsilon) curve, the authors find that the maximum value of the gauge factor (gamma(max)) is as large as 5000-20000 in the low-strain (parallel to Delta epsilon parallel to <= 25x10(-6)) range. Furthermore, the response is linear. Two mechanisms are proposed to explain the piezoresistance behavior of these MTJs: one is due to the tunneling magnetoresistance effect (the magnetic origin) and the other due to the ordinary tunneling effect (the nonmagnetic origin). (c) 2006 American Institute of Physics.
Relation: 89(22)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47193
Appears in Collections:[光電科學研究所] 期刊論文

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