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| Title: | Optimization of sputter deposition parameters for magnetostrictive Fe62Co19Ga19/Si(100) films |
| Authors: | 任盛源
T. L. Tsai
S. U. Jen |
| Contributors: | 國立臺灣海洋大學:光電科學研究所 |
| Date: | 2012-04
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| Issue Date: | 2018-07-04T06:39:16Z
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| Publisher: | Journal of Applied Physics |
| Abstract: | Abstract: A good magnetostrictive material should have large saturation magnetostriction (λS) and low saturation (or anisotropy) field (HS), such that its magnetostriction susceptibility (SH) can be as large as possible. In this study, we have made Fe62Co19Ga19/Si(100) nano-crystalline films by using the dc magnetron sputtering technique under various deposition conditions: Ar working gas pressure (pAr) was varied from 1 to 15 mTorr; sputtering power (Pw) was from 10 to 120 W; deposition temperature (TS) was from room temperature (RT) to 300 °C, The film thickness (tf) was fixed at 175 nm. Each magnetic domain looked like a long leaf, with a long-axis of about 12–15 μm and a short-axis of about 1.5 μm. The optimal magnetic and electrical properties were found from the Fe62Co19Ga19 film made with the sputter deposition parameters of pAr = 5 mTorr, Pw = 80 W, and TS = RT. Those optimal properties include λS = 80 ppm, HS = 19.8 Oe, SH = 6.1 ppm/Oe, and electrical resistivity ρ = 57.0 μΩ cm. Note that SH for the conventional magnetostrictive Terfenol-D film is, in general, equal to 1.5 ppm/Oe only. |
| Relation: | 111(7) |
| URI: | http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47183 |
| Appears in Collections: | [光電科學研究所] 期刊論文
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